Search results for "Atomic layer epitaxy"

showing 3 items of 3 documents

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

2014

In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content i…

Materials scienceSiliconSilicon dioxideta221Conformal coatingAnalytical chemistrychemistry.chemical_elementchemistry.chemical_compoundAtomic layer depositionMaterials ChemistryAtomic layer epitaxySilicon dioxideta318Thin filmta216ta116Plasma processingplasma-enhanced atomic layer depositionPlasma-enhanced atomic layer depositionsilicon dioxideconformal coatingta213ta114Atomic layer depositionbatch depositionIon platingMetals and AlloysPrecursorsSurfaces and InterfacesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistryatomic layer depositionprecursorsBatch depositionDeposition (chemistry)
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Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition

2011

The atomic layer deposition of copper metal thin films was achieved using a three precursor sequence entailing Cu(OCHMeCH2NMe2)2, formic acid, and hydrazine. A constant growth rate of 0.47−0.50 A/cycle was observed at growth temperatures between 100 and 170 °C. The resulting films are high purity and have low resistivities.

Materials scienceta114Formic acidGeneral Chemical EngineeringHydrazineInorganic chemistryAnalytical chemistrychemistry.chemical_elementGeneral ChemistryCopperchemistry.chemical_compoundAtomic layer depositionchemistryElectrical resistivity and conductivityMaterials ChemistryAtomic layer epitaxyGrowth rateThin filmta116Chemistry of Materials
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Review article: recommended reading list of early publications on atomic layer deposition - outcome of the "virtual Project on the History of ALD"

2017

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual proj…

semiconductor manufacturingThin filmsPatent literature2015 Nano TechnologyHOL - HolstLibrary scienceNanotechnology02 engineering and technologydeposition01 natural sciencesPoster presentationsAtomic layer deposition0103 physical sciencesAtomic layer epitaxy[CHIM]Chemical SciencesReading listPatentsComputingMilieux_MISCELLANEOUSgas-solid reaction010302 applied physicsTS - Technical SciencesIndustrial Innovationinorganic materialPhysicsAtomic layer depositionSilicaSurfaces and InterfacesatomikerroskasvatusAtomic layer021001 nanoscience & nanotechnologyCondensed Matter Physicshistory of technologySurfaces Coatings and FilmsALD0210 nano-technologySoviet unionAtomic layer epitaxial growthEpitaxyJournal of Vacuum Science and Technology A
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